RQ6E050ATTCR Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:TSMT6 (SC-95)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):1.25W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:940pF @ 15V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:20.8nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:27 mOhm @ 5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:5A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)