RQ7E110AJTCR Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1.5V @ 10mA
• Package / Case:8-SMD, Flat Lead
• Supplier Device Package:TSMT8
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.5W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2410pF @ 15V
• Vgs (Max):±12V
• Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:9 mOhm @ 4.5A, 11V
• Drive Voltage (Max Rds On, Min Rds On):4.5V
• Current - Continuous Drain (Id) @ 25°C:11A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)