RQJ0303PGDQA#H6

Technical Details

• Vgs(th) (Max) @ Id:--
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:3-MPAK
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):800mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:625pF @ 10V
• Vgs (Max):+10V, -20V
• Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:68 mOhm @ 1.6A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)