RSD046P05TL Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:3V @ 1mA
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package:CPT3
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):850mW (Ta), 15W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:550pF @ 10V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:12nC @ 5V

• Series:--
• Rds On (Max) @ Id, Vgs:155 mOhm @ 4.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
• Drain to Source Voltage (Vdss):45V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Not For New Designs
• Packaging:Tape & Reel (TR)