RSQ025P03TR Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 1mA
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:TSMT6 (SC-95)
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):1.25W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:320pF @ 10V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:4.4nC @ 5V

• Series:--
• Rds On (Max) @ Id, Vgs:110 mOhm @ 2.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Not For New Designs
• Packaging:Tape & Reel (TR)