RUC002N05HZGT116 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1V @ 1mA
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:SST3
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):350mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:25pF @ 10V
• Vgs (Max):±8V

• Series:Automotive, AEC-Q101
• Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
• Drain to Source Voltage (Vdss):50V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)