RUF025N02TL Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1.3V @ 1mA
• Package / Case:3-SMD, Flat Leads
• Supplier Device Package:TUMT3
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):320mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:370pF @ 10V
• Vgs (Max):±10V
• Gate Charge (Qg) (Max) @ Vgs:5nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:54 mOhm @ 2.5A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)