RW1A030APT2CR Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1V @ 1mA
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:6-WEMT
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):700mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2700pF @ 6V
• Vgs (Max):-8V
• Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:42 mOhm @ 3A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:3A (Ta)
• Drain to Source Voltage (Vdss):12V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Not For New Designs
• Packaging:Tape & Reel (TR)