SCT2H12NYTB

Technical Details

• Vgs(th) (Max) @ Id:4V @ 410µA
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package:TO-268
• Mounting Type:Surface Mount
• Operating Temperature:175°C (TJ)
• Power Dissipation (Max):44W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:184pF @ 800V
• Vgs (Max):+22V, -6V
• Gate Charge (Qg) (Max) @ Vgs:14nC @ 18V

• Series:--
• Rds On (Max) @ Id, Vgs:1.5 Ohm @ 1.1A, 18V
• Drive Voltage (Max Rds On, Min Rds On):18V
• Current - Continuous Drain (Id) @ 25°C:4A (Tc)
• Drain to Source Voltage (Vdss):1700V
• Technology:SiCFET (Silicon Carbide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)