SCT3120ALGC11

Technical Details

• Vgs(th) (Max) @ Id:5.6V @ 3.33mA
• Package / Case:TO-247-3
• Supplier Device Package:TO-247N
• Mounting Type:Through Hole
• Operating Temperature:175°C (TJ)
• Power Dissipation (Max):103W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:460pF @ 500V
• Vgs (Max):+22V, -4V
• Gate Charge (Qg) (Max) @ Vgs:38nC @ 18V

• Series:--
• Rds On (Max) @ Id, Vgs:156 mOhm @ 6.7A, 18V
• Drive Voltage (Max Rds On, Min Rds On):18V
• Current - Continuous Drain (Id) @ 25°C:21A (Tc)
• Drain to Source Voltage (Vdss):650V
• Technology:SiCFET (Silicon Carbide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube