SCTWA50N120

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:122nC @ 20V
• Package / Case:TO-247-3
• Supplier Device Package:HiP247™
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 200°C (TJ)
• Power Dissipation (Max):318W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1900pF @ 400V
• Vgs (Max):+25V, -10V
• Series:--

• Vgs(th) (Max) @ Id:3V @ 1mA
• Rds On (Max) @ Id, Vgs:69 mOhm @ 40A, 20V
• Drive Voltage (Max Rds On, Min Rds On):20V
• Current - Continuous Drain (Id) @ 25°C:65A (Tc)
• Drain to Source Voltage (Vdss):1200V
• Technology:SiCFET (Silicon Carbide)
• FET Type:N-Channel
• Part Status:Active