SH8M13GZETB

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:N and P-Channel
• FET Feature:--
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:6A, 7A
• Rds On (Max) @ Id, Vgs:29 mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:18nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds:1200pF @ 10V
• Power - Max:2W
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SOP