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SI1051X-T1-GE3

Vishay Siliconix
SI1051X-T1-GE3 HongDa Electronics SI1051X-T1-GE3
  • Manufacturer Part# SI1051X-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 8V 1.2A SC89-6
  • More DetailP-Channel 8V 236mW (Ta) Surface Mount SC-89-6
In Stock: 1000

Can ship immediately

Datasheet:
SI1051X-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SC-89-6
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):236mW (Ta)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:560pF @ 4V
  • Vgs (Max):±5V
  • Gate Charge (Qg) (Max) @ Vgs:9.45nC @ 5V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:122 mOhm @ 1.2A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:--
  • Drain to Source Voltage (Vdss):8V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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