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SI3590DV-T1-E3 Discrete Semiconductor Products

Vishay Siliconix
SI3590DV-T1-E3 HongDa Electronics SI3590DV-T1-E3
  • Manufacturer Part# SI3590DV-T1-E3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N/P-CH 30V 2.5A 6TSOP
  • More DetailMosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW ...
In Stock: 1000

Can ship immediately

Datasheet:
SI3590DV-T1-E3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Base Part Number:SI3590
  • Supplier Device Package:6-TSOP
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power - Max:830mW
  • Input Capacitance (Ciss) (Max) @ Vds:--
  • Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 4.5V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:77 mOhm @ 3A, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:2.5A, 1.7A
  • Drain to Source Voltage (Vdss):30V
  • FET Feature:Logic Level Gate
  • FET Type:N and P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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