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SI4936BDY-T1-GE3

Vishay Siliconix
SI4936BDY-T1-GE3 HongDa Electronics SI4936BDY-T1-GE3
  • Manufacturer Part# SI4936BDY-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2N-CH 30V 6.9A 8-SOIC
  • More DetailMosfet Array 2 N-Channel (Dual) 30V 6.9A 2.8W Surf...
In Stock: 1000

Can ship immediately

Datasheet:
SI4936BDY-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Base Part Number:SI4936
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power - Max:2.8W
  • Input Capacitance (Ciss) (Max) @ Vds:530pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:35 mOhm @ 5.9A, 10V
  • Current - Continuous Drain (Id) @ 25°C:6.9A
  • Drain to Source Voltage (Vdss):30V
  • FET Feature:Logic Level Gate
  • FET Type:2 N-Channel (Dual)
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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