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SI5913DC-T1-E3

Vishay Siliconix
SI5913DC-T1-E3 HongDa Electronics SI5913DC-T1-E3
  • Manufacturer Part# SI5913DC-T1-E3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 20V 4A 1206-8
  • More DetailP-Channel 20V 4A (Tc) 1.7W (Ta), 3.1W (Tc) Surface...
In Stock: 1000

Can ship immediately

Datasheet:
SI5913DC-T1-E3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Package / Case:8-SMD, Flat Lead
  • Supplier Device Package:1206-8 ChipFET™
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1.7W (Ta), 3.1W (Tc)
  • FET Feature:Schottky Diode (Isolated)
  • Input Capacitance (Ciss) (Max) @ Vds:330pF @ 10V
  • Vgs (Max):±12V
  • Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V

 

  • Series:LITTLE FOOT®
  • Rds On (Max) @ Id, Vgs:84 mOhm @ 3.7A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:4A (Tc)
  • Drain to Source Voltage (Vdss):20V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Last Time Buy
  • Packaging:Tape & Reel (TR) 

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