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SI7317DN-T1-GE3

Vishay Siliconix
SI7317DN-T1-GE3 HongDa Electronics SI7317DN-T1-GE3
  • Manufacturer Part# SI7317DN-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 150V 2.8A 1212-8
  • More DetailP-Channel 150V 2.8A (Tc) 3.2W (Ta), 19.8W (Tc) Sur...
In Stock: 3000

Can ship immediately

Datasheet:
SI7317DN-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Package / Case:PowerPAK® 1212-8
  • Supplier Device Package:PowerPAK® 1212-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.2W (Ta), 19.8W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:365pF @ 75V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:9.8nC @ 10V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:1.2 Ohm @ 500mA, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
  • Drain to Source Voltage (Vdss):150V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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