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SI7997DP-T1-GE3

Vishay Siliconix
SI7997DP-T1-GE3 HongDa Electronics SI7997DP-T1-GE3
  • Manufacturer Part# SI7997DP-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2P-CH 30V 60A PPAK SO-8
  • More DetailMosfet Array 2 P-Channel (Dual) 30V 60A 46W Surfac...
In Stock: 9000

Can ship immediately

Datasheet:
SI7997DP-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Base Part Number:SI7997
  • Supplier Device Package:PowerPAK® SO-8 Dual
  • Package / Case:PowerPAK® SO-8 Dual
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power - Max:46W
  • Input Capacitance (Ciss) (Max) @ Vds:6200pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs:160nC @ 10V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:5.5 mOhm @ 20A, 10V
  • Current - Continuous Drain (Id) @ 25°C:60A
  • Drain to Source Voltage (Vdss):30V
  • FET Feature:Standard
  • FET Type:2 P-Channel (Dual)
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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