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SI7998DP-T1-GE3

Vishay Siliconix
SI7998DP-T1-GE3 HongDa Electronics SI7998DP-T1-GE3
  • Manufacturer Part# SI7998DP-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2N-CH 30V 25A PPAK SO-8
  • More DetailMosfet Array 2 N-Channel (Dual) 30V 25A, 30A 22W, ...
In Stock: 9000

Can ship immediately

Datasheet:
SI7998DP-T1-GE3 Datasheet

Technical Details

  • Series:TrenchFET®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:25A, 30A
  • Rds On (Max) @ Id, Vgs:9.3 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 15V
  • Power - Max:22W, 40W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SO-8 Dual
  • Supplier Device Package:PowerPAK® SO-8 Dual

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