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SI8900EDB-T2-E1

Vishay Siliconix
SI8900EDB-T2-E1 HongDa Electronics SI8900EDB-T2-E1
  • Manufacturer Part# SI8900EDB-T2-E1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2N-CH 20V 5.4A 10-MFP
  • More DetailMosfet Array 2 N-Channel (Dual) Common Drain 20V 5...
In Stock: 1000

Can ship immediately

Datasheet:
SI8900EDB-T2-E1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:1V @ 1.1mA
  • Base Part Number:SI8900
  • Supplier Device Package:10-Micro Foot™ CSP (2x5)
  • Package / Case:10-UFBGA, CSPBGA
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power - Max:1W
  • Input Capacitance (Ciss) (Max) @ Vds:--
  • Gate Charge (Qg) (Max) @ Vgs:--

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:--
  • Current - Continuous Drain (Id) @ 25°C:5.4A
  • Drain to Source Voltage (Vdss):20V
  • FET Feature:Logic Level Gate
  • FET Type:2 N-Channel (Dual) Common Drain
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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