SIA527DJ-T1-GE3 Discrete Semiconductor Products

Technical Details

• Series:TrenchFET®
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:N and P-Channel
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):12V
• Current - Continuous Drain (Id) @ 25°C:4.5A
• Rds On (Max) @ Id, Vgs:29 mOhm @ 5A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:15nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds:500pF @ 6V
• Power - Max:7.8W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:PowerPAK® SC-70-6 Dual
• Supplier Device Package:PowerPAK® SC-70-6 Dual