• Manufacturer Part# SIB410DK-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 9A 8SO
  • More DetailN-Channel 30V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface ...
In Stock: 1000

Can ship immediately

Technical Details

  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Package / Case:PowerPAK® SC-75-6L
  • Supplier Device Package:PowerPAK® SC-75-6L Single
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.5W (Ta), 13W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:560pF @ 15V
  • Vgs (Max):±8V
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 8V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:42 mOhm @ 3.8A, 4.5V
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Current - Continuous Drain (Id) @ 25°C:9A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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