SIB800EDK-T1-GE3

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA
• Package / Case:PowerPAK® SC-75-6L
• Supplier Device Package:PowerPAK® SC-75-6L Single
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.1W (Ta), 3.1W (Tc)
• FET Feature:Schottky Diode (Isolated)
• Vgs (Max):±6V
• Gate Charge (Qg) (Max) @ Vgs:1.7nC @ 4.5V
• Series:LITTLE FOOT®

• Rds On (Max) @ Id, Vgs:225 mOhm @ 1.6A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:1.5A (Tc)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)