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SIE860DF-T1-GE3

Vishay Siliconix
SIE860DF-T1-GE3 HongDa Electronics SIE860DF-T1-GE3
  • Manufacturer Part# SIE860DF-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 30V 60A POLARPAK
  • More DetailN-Channel 30V 60A (Tc) 5.2W (Ta), 104W (Tc) Surfac...
In Stock: 1000

Can ship immediately

Datasheet:
SIE860DF-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Package / Case:10-PolarPAK® (M)
  • Supplier Device Package:10-PolarPAK® (M)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):5.2W (Ta), 104W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 15V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:105nC @ 10V

 

  • Series:TrenchFET®
  • Rds On (Max) @ Id, Vgs:2.1 mOhm @ 21.7A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:60A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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