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SIHB12N60E-GE3

Vishay Siliconix
SIHB12N60E-GE3 HongDa Electronics SIHB12N60E-GE3
  • Manufacturer Part# SIHB12N60E-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 12A TO263
  • More DetailN-Channel 600V 12A (Tc) 147W (Tc) Surface Mount D2...
In Stock: 158

Can ship immediately

Datasheet:
SIHB12N60E-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):147W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:937pF @ 100V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:58nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:380 mOhm @ 6A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Bulk 

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