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SIHD7N60ET4-GE3

Vishay Siliconix
SIHD7N60ET4-GE3 HongDa Electronics SIHD7N60ET4-GE3
  • Manufacturer Part# SIHD7N60ET4-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 7A TO252AA
  • More DetailN-Channel 600V 7A (Tc) 78W (Tc) Surface Mount TO-2...
In Stock: 1000

Can ship immediately

Datasheet:
SIHD7N60ET4-GE3 Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:TO-252AA
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):78W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:680pF @ 100V
  • Vgs (Max):±30V
  • Series:E

 

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Rds On (Max) @ Id, Vgs:600 mOhm @ 3.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:7A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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