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SIHG24N65E-E3

Vishay Siliconix
SIHG24N65E-E3 HongDa Electronics SIHG24N65E-E3
  • Manufacturer Part# SIHG24N65E-E3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 24A TO247AC
  • More DetailN-Channel 650V 24A (Tc) 250W (Tc) Through Hole TO-...
In Stock: 1000

Can ship immediately

Datasheet:
SIHG24N65E-E3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):250W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2740pF @ 100V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:122nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:145 mOhm @ 12A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:24A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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