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SIHH20N50E-T1-GE3

Vishay Siliconix
SIHH20N50E-T1-GE3 HongDa Electronics SIHH20N50E-T1-GE3
  • Manufacturer Part# SIHH20N50E-T1-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 500V 22A POWERPAK8
  • More DetailN-Channel 500V 22A (Tc) 174W (Tc) Surface Mount Po...
In Stock: 2980

Can ship immediately

Datasheet:
SIHH20N50E-T1-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PowerPAK® 8 x 8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):174W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2063pF @ 100V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:84nC @ 10V

 

  • Series:E
  • Rds On (Max) @ Id, Vgs:147 mOhm @ 10A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:22A (Tc)
  • Drain to Source Voltage (Vdss):500V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Cut Tape (CT) 

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