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SIHP22N60E-GE3

Vishay Siliconix
SIHP22N60E-GE3 HongDa Electronics SIHP22N60E-GE3
  • Manufacturer Part# SIHP22N60E-GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 21A TO220AB
  • More DetailN-Channel 600V 21A (Tc) 227W (Tc) Through Hole
In Stock: 971

Can ship immediately

Datasheet:
SIHP22N60E-GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-220-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):227W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1920pF @ 100V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:86nC @ 10V
  • Series:E

 

  • Rds On (Max) @ Id, Vgs:180 mOhm @ 11A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:21A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Cut Tape (CT) 

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