SIHU2N80E-GE3

Technical Details

• Vgs(th) (Max) @ Id:4V @ 250µA
• Package / Case:TO-251-3 Long Leads, IPak, TO-251AB
• Supplier Device Package:IPAK (TO-251)
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):62.5W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:315pF @ 100V
• Vgs (Max):±30V
• Gate Charge (Qg) (Max) @ Vgs:19.6nC @ 10V

• Series:E
• Rds On (Max) @ Id, Vgs:2.75 Ohm @ 1A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
• Drain to Source Voltage (Vdss):800V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube