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SIR108DP-T1-RE3

Vishay Siliconix
SIR108DP-T1-RE3 HongDa Electronics SIR108DP-T1-RE3
  • Manufacturer Part# SIR108DP-T1-RE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CHAN 100V POWERPAK SO-8
  • More DetailN-Channel 100V 12.4A (Ta), 45A (Tc) 5W (Ta), 65.7W...
In Stock: 1000

Can ship immediately

Datasheet:
SIR108DP-T1-RE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.6V @ 250µA
  • Package / Case:PowerPAK® SO-8
  • Supplier Device Package:PowerPAK® SO-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):5W (Ta), 65.7W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2060pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:41.5nC @ 10V

 

  • Series:TrenchFET® Gen IV
  • Rds On (Max) @ Id, Vgs:13.5 mOhm @ 10A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:12.4A (Ta), 45A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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