SIR770DP-T1-GE3

Technical Details

• Series:TrenchFET®
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:8A
• Rds On (Max) @ Id, Vgs:21 mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id:2.8V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:900pF @ 15V
• Power - Max:17.8W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:PowerPAK® SO-8 Dual
• Supplier Device Package:PowerPAK® SO-8 Dual