SIRB40DP-T1-GE3

Technical Details

• Series:TrenchFET®
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):40V
• Current - Continuous Drain (Id) @ 25°C:40A (Tc)
• Rds On (Max) @ Id, Vgs:3.25 mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2.4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:45nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:4290pF @ 20V
• Power - Max:46.2W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:PowerPAK® SO-8 Dual
• Supplier Device Package:PowerPAK® SO-8 Dual