SIS903DN-T1-GE3

Technical Details

• Series:TrenchFET® Gen III
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 P-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:6A (Tc)
• Rds On (Max) @ Id, Vgs:20.1 mOhm @ 5A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:2565pF @ 10V
• Power - Max:2.6W (Ta), 23W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:PowerPAK® 1212-8 Dual
• Supplier Device Package:PowerPAK® 1212-8 Dual