SISC06DN-T1-GE3

Technical Details

• Vgs(th) (Max) @ Id:2.1V @ 250µA
• Package / Case:PowerPAK® 1212-8
• Supplier Device Package:PowerPAK® 1212-8
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):3.7W (Ta), 46.3W (Tc)
• FET Feature:Schottky Diode (Isolated)
• Input Capacitance (Ciss) (Max) @ Vds:2455pF @ 15V
• Vgs (Max):+20V, -16V
• Gate Charge (Qg) (Max) @ Vgs:58nC @ 10V

• Series:TrenchFET® Gen IV
• Rds On (Max) @ Id, Vgs:2.7 mOhm @ 15A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:27.6A (Ta), 40A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)