SISF00DN-T1-GE3

Technical Details

• Series:TrenchFET® Gen IV
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 N-Channel (Dual) Common Drain
• FET Feature:Standard
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:60A (Tc)
• Rds On (Max) @ Id, Vgs:5 mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2.1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:53nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:2700pF @ 15V
• Power - Max:69.4W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:PowerPAK® 1212-8SCD
• Supplier Device Package:PowerPAK® 1212-8SCD