SIUD412ED-T1-GE3

Technical Details

• Vgs(th) (Max) @ Id:900mV @ 250µA
• Package / Case:PowerPAK® 0806
• Supplier Device Package:PowerPAK® 0806
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.25W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:21pF @ 6V
• Vgs (Max):±5V
• Gate Charge (Qg) (Max) @ Vgs:0.71nC @ 4.5V

• Series:TrenchFET®
• Rds On (Max) @ Id, Vgs:340 mOhm @ 500mA, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:500mA (Tc)
• Drain to Source Voltage (Vdss):12V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)