SIZF916DT-T1-GE3

Technical Details

• Series:TrenchFET® Gen IV
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:23A (Ta), 40A (Tc)
• Rds On (Max) @ Id, Vgs:4 mOhm @ 10A, 10V, 1.25 mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2.4V @ 250µA, 2.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V, 95nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:1060pF @ 15V, 4320pF @ 15V
• Power - Max:3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerWDFN
• Supplier Device Package:8-PowerPair® (6x5)