SKI10123 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 1.5mA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:TO-263
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):135W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:6420pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:88.8nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:11.6 mOhm @ 33A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:66A (Tc)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)