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SPD18P06PGBTMA1

Infineon Technologies
SPD18P06PGBTMA1 HongDa Electronics SPD18P06PGBTMA1
  • Manufacturer Part# SPD18P06PGBTMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 60V 18.6A TO252-3
  • More DetailP-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG...
In Stock: 1000

Can ship immediately

Datasheet:
SPD18P06PGBTMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:PG-TO252-3
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):80W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:860pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V

 

  • Series:SIPMOS®
  • Rds On (Max) @ Id, Vgs:130 mOhm @ 13.2A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:18.6A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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