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SPD26N06S2L-35

Infineon Technologies
SPD26N06S2L-35 HongDa Electronics SPD26N06S2L-35
  • Manufacturer Part# SPD26N06S2L-35
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 55V 30A DPAKN-Channel 55V 30A (Tc) 68W...
  • More DetailN/A
In Stock: 1000

Can ship immediately

Datasheet:
SPD26N06S2L-35 Datasheet

Technical Details

  • Series:OptiMOS™
  • Packaging:Tape & Reel (TR) 
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:35 mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id:2V @ 26µA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:790pF @ 25V
  • FET Feature:--
  • Power Dissipation (Max):68W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:P-TO252-3
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number:--

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Feature

    1. N-Channel

    2. Enhancement mode

    3. Logic Level

    4. 175°C operating temperature

    5. Avalanche rated

    6. dv/dt rated

2. Product Summary

    image.png

3. Electrical Characteristics

    image.png


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