SPN02N60C3

Technical Details

• Vgs(th) (Max) @ Id:3.9V @ 80µA
• Package / Case:TO-261-4, TO-261AA
• Supplier Device Package:PG-SOT223-4
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.8W (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:200pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:13nC @ 10V

• Series:CoolMOS™
• Rds On (Max) @ Id, Vgs:2.5 Ohm @ 1.1A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
• Drain to Source Voltage (Vdss):650V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)