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SPP11N80C3XKSA1

Infineon Technologies
SPP11N80C3XKSA1 HongDa Electronics SPP11N80C3XKSA1
  • Manufacturer Part# SPP11N80C3XKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 800V 11A TO-220AB
  • More DetailN-Channel 800V 11A (Tc) 156W (Tc) Through Hole PG-...
In Stock: 1000

Can ship immediately

Datasheet:
SPP11N80C3XKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.9V @ 680µA
  • Package / Case:TO-220-3
  • Supplier Device Package:PG-TO220-3-1
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):156W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1600pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:85nC @ 10V

 

  • Series:CoolMOS™
  • Rds On (Max) @ Id, Vgs:450 mOhm @ 7.1A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drain to Source Voltage (Vdss):800V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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