SPP42N03S2L13

Technical Details

• Vgs(th) (Max) @ Id:2V @ 37µA
• Package / Case:TO-220-3
• Supplier Device Package:PG-TO220-3-1
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):83W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1130pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:30.5nC @ 10V

• Series:OptiMOS™
• Rds On (Max) @ Id, Vgs:12.9 mOhm @ 21A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:42A (Tc)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube