SPU18P06P

Technical Details

• Vgs(th) (Max) @ Id:4V @ 1mA
• Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
• Supplier Device Package:PG-TO251-3
• Mounting Type:Through Hole
• Operating Temperature:--
• Power Dissipation (Max):--
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:860pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V

• Series:SIPMOS®
• Rds On (Max) @ Id, Vgs:130 mOhm @ 13.2A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:18.6A (Tc)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tube