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SQ1912AEEH-T1_GE3

Vishay Siliconix
SQ1912AEEH-T1_GE3 HongDa Electronics SQ1912AEEH-T1_GE3
  • Manufacturer Part# SQ1912AEEH-T1_GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2N-CH 20V POWERPAK SC70-6
  • More DetailMosfet Array 2 N-Channel (Dual) 20V 800mA (Tc) 1.5...
In Stock: 1000

Can ship immediately

Datasheet:
SQ1912AEEH-T1_GE3 Datasheet

Technical Details

  • Series:Automotive, AEC-Q101, TrenchFET®
  • Packaging:Tape & Reel (TR) 
  • Part Status:Active
  • FET Type:2 N-Channel (Dual)
  • FET Feature:Standard
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:800mA (Tc)
  • Rds On (Max) @ Id, Vgs:280 mOhm @ 1.2A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:1.25nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:27pF @ 10V
  • Power - Max:1.5W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SC-70-6 Dual
  • Supplier Device Package:PowerPAK® SC-70-6 Dual

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