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SQ3419AEEV-T1_GE3

Vishay Siliconix
SQ3419AEEV-T1_GE3 HongDa Electronics SQ3419AEEV-T1_GE3
  • Manufacturer Part# SQ3419AEEV-T1_GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CHANNEL 40V 6.9A 6TSOP
  • More DetailP-Channel 40V 6.9A (Tc) 5W (Tc) Surface Mount 6-TS...
In Stock: 1000

Can ship immediately

Datasheet:
SQ3419AEEV-T1_GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-TSOP
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):5W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:975pF @ 20V
  • Vgs (Max):±12V
  • Gate Charge (Qg) (Max) @ Vgs:12.5nC @ 4.5V

 

  • Series:Automotive, AEC-Q101, TrenchFET®
  • Rds On (Max) @ Id, Vgs:61 mOhm @ 2.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:6.9A (Tc)
  • Drain to Source Voltage (Vdss):40V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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