SQ4153EY-T1_GE3

Technical Details

• Vgs(th) (Max) @ Id:900mV @ 250µA
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SOIC
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):7.1W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:11000pF @ 6V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:151nC @ 4.5V

• Series:Automotive, AEC-Q101, TrenchFET®
• Rds On (Max) @ Id, Vgs:8.32 mOhm @ 14A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:25A (Tc)
• Drain to Source Voltage (Vdss):12V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)