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SQM10250E_GE3

Vishay Siliconix
SQM10250E_GE3 HongDa Electronics SQM10250E_GE3
  • Manufacturer Part# SQM10250E_GE3
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CHAN 250V TO-263
  • More DetailN-Channel 250V 65A (Tc) 375W (Tc) Surface Mount TO...
In Stock: 800

Can ship immediately

Datasheet:
SQM10250E_GE3 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 250µA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263 (D²Pak)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):375W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:4050pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:75nC @ 10V

 

  • Series:Automotive, AEC-Q101, TrenchFET®
  • Rds On (Max) @ Id, Vgs:30 mOhm @ 15A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:65A (Tc)
  • Drain to Source Voltage (Vdss):250V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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