SQM50020EL_GE3

Technical Details

• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:TO-263 (D²Pak)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):375W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:15100pF @ 25V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:200nC @ 10V

• Series:Automotive, AEC-Q101, TrenchFET®
• Rds On (Max) @ Id, Vgs:2 mOhm @ 30A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:120A (Tc)
• Drain to Source Voltage (Vdss):60V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)